High Temperature Transport Property of B- and P-Doped GeSi Single Crystals Prepared by a Czochralski Method
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2001
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.42.1024